features low cost glass passivated junction low leakage l o w f o r w a r d v o l t a g e d r op high current capability and similar solvents mechanical data case:jedec r--1,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.007ounces,0.20 grams mounting pos ition: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. 1 f 3 g 1 f 4 g 1 f 5 g 1 f 6 g 1 f 7 g u n i t s maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v max imum rms v oltage v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @1.0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr 250 ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja <d operating junction temperature range t j storage temperature range t stg note:1. measured with i f =0.5a, i r =1a, i rr =0.25a. 500 voltage range: 50 --- 1000 v current: 1.0 a 100 1 f 2 g 1.0 a f a s t r e c o v e r y r e c t i f i e r s i f(av) the plastic material carries u/l recognition 94v-0 i r 25 . 0 5.0 100.0 1.3 70 a i fsm 3. thermal resistance f rom junction to ambient. a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 55---- +150 - 55---- + 150 55 150 12 1f1 g - - - 1f7 g r - 1 50 35 50 1 f 1 g easily cleaned with freon,alcohol,isopropanol 100 dimensions in millimeters www.diode.kr diode semiconductor korea
pulse generator (note2) d.u.t. 1 n.1. 50 n.1. oscilloscope (note 1) (+) 50vdc (approx) (-) 10 n.1. (-) (+) 0 . 6 t j =25 pulse width=300 2 . 0 1 . 6 1 . 8 .2 tj=25 f=1mhz 1 .1 2 4 .4 1 . 0 2 14 10 12 16 10 410204 0 100 t rr - 0 . 2 5 a - 1 . 0 a 0 +0.5a 1cm .2 0 0 50 .4 .6 .8 1.0 1 0 0 1 7 5 1 5 0 single phase half wave 60h z resistive or inductive load amperes amperes peak forward surge current amperes junction capacitance,pf fi g. 4--peak forward surge current fig.5---typical junction capacitance 2.rise time=10ns max. source impedance=5o fig.2 --typical forward fig.3 --typical forward characteri sti cs current derating curve instantaneous forward current average forward current n u m be r o f c y c l e s a t 6 0 h z r e v e r s e v o l t a g e , v o l t s 1 f 1 g --- 1 f 7 g set time base for 50/100 ns /cm ambient temperature, instantaneous forward voltage,volts notes:1.rise time =7ns max. input impedance=1m .22pf fig . 1 -- reverse recovery time characteri sti c and test ci rcui t di agram 1 0 0 12 5 2 0 1 5 25 41 0 20 1 0 0 40 t j =125 8.3ms single half sine-wave diode semiconductor korea www.diode.kr
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